Figure 6

Multi-stack nanoparticle-based memristive devices relying on AgAu (left) and AgPt (right) nanoparticles exhibit diffusive memristive switching characteristics. (a) The switching characteristics are depicted for 20 consecutive cycles (top) of an AgAu nanoparticle device with 2 nm SiO2 separation layers. The corresponding histogram (bottom) shows a narrow distribution of SET (around 0.89 V) and RESET (around 0.23 V) voltages with a clear separation in between. (b) For a AgPt nanoparticle-based multi-stack device with SiO2 separation layers of 4 nm each, the switching characteristics are depicted for 60 consecutive cycles (top) and the corresponding histogram (bottom) shows a narrow distribution of SET (around 0.61 V) and RESET (around 0.32 V) voltages with a clear separation in between.