Figure 6 | Scientific Reports

Figure 6

From: Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Figure 6

Room temperature device switching characteristics. (a) Resistance versus applied magnetic field and (b) resistance versus DC voltage (1 ms pulses) curves from a nominal 30 nm device. (c) Switching error rate of a nominal 30 nm device measured with 10 ns pulses down to 1 ppm error level. 50% probability switching voltage dependence for nominal 30 nm diameter devices on (d) CFB free layer thickness and (e) pulse length.

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