Figure 9
Methods|Fabrication flow and VO2 characterization description. (a) VO2 deposition via PLD, followed by a photolithography step and dry etching of the VO2. (b) Cr-20 nm/Al 400 nm contact metal deposition by evaporation after a subsequent photolithography and patterning on the VO2 (c), Al evaporation and lift off for top metallization. (d) Top view of (a). (e) Top view of (b). (f) Top view of (c). (g) Grain size of the PLD VO2 deposition. (h) Conductivity levels in heating (red) and in cooling (blue). (i) Switch SEM photo: The gap in the contact metal is below 600 nm over the entire width of the switches. This gap where only VO2 is active represents the switch length.
