Figure 4 | Scientific Reports

Figure 4

From: Random nanohole arrays and its application to crystalline Si thin foils produced by proton induced exfoliation for solar cells

Figure 4

(a–c) Cross-sectional schematics and SEM images of the random Si nanohole structures with varying the isotropic etch time. Region 1, 2 and 3 correspond to the early etch stage, the optimal etch stage and the late etch stage, respectively. (d) Solar weighted average reflectances with varying the indium nominal thickness and the etch time. The optically effective nanostructures are formed at region 2.

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