Figure 5
(a) Cross-sectional SEM images of the random Si nanohole arrays fabricated with different indium nominal thicknesses of 50 nm (top), 100 nm (middle) and 200 nm (bottom). Total reflectances (diffuse + specular) of the Si wafers (525 µm thickness) textured with the Si nanohole arrays and coated with a single layer antireflection coating of SiNx (70 nm). The inset figure is the cross-sectional SEM image of the conventional pyramids in micrometer scale.
