Figure 8
Bias dependence of AgS2 complexes, simulated using DFT for a (3 × 2) supercell with AgS2 complexes at the two-fold hollow site, and using PBE. Results are averaged over Ag(110) slab thicknesses L = 7 to 12. The schematic in the lower left shows the corresponding atom positions. Each column represents a fixed bias voltage VS, and each row represents fixed tunneling current I, in arbitrary units.
