Figure 3

IR Thermography measurement on the sample. (a,b) Temperature map on the channel of the device without and with a Cu filled micro-trench at a power density of 11.57 and 12.61 Wmm⁻¹. (c,d) Thermal breakdown in the HEMT without a trench as compared to no breakdown with a trench at an applied bias of V_DS = 200 V.