Figure 4 | Scientific Reports

Figure 4

From: Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure

Figure 4

Raman thermometry for validation of temperature rise in the device structure. (a) Si and GaN E2 frequency peak (the GaN E2 peak was used for monitoring the channel temperature of the HEMT), (b) Temperature dependence of the Raman frequency for the active E2 mode in GaN, (c) GaN E2 peak shift in the AlGaN/GaN HEMT without micro-trench fabrication and (d) Smaller peak shift in the HEMT with copper filled micro-trench, indicating a reduction in the temperature rise at the same power density.

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