Figure 2
SOT-induced switching of the devices. (a) RPHE vs H for Device 1. The device is prepared with magnetization in M1 state and the field is applied at α = 330 deg. The data are taken for each field step after the field is switched off. The magnetization states and the field direction are indicated. (b) RPHE vs I for Device 1. The device is prepared either with magnetization in M1 state or with magnetization in M2 state. The data are taken for each current step with a probing current of 50 μA. The magnetization states and the current direction are indicated. (c,d) RPHE vs H and RPHE vs I, respectively, for Device 2. The measurements are the same as in (a,b). (e) A schematic illustration of Device 2 indicating the remanent states in the overlap area and the numbers denoting the contact pads. (f) Current pulses of 2.7 mA along 3–6 and 5–2 arms are applied alternatively to induce successive switchings between states M2 and M3.
