Table 1 Optimal combinations of planar inclusions media (columns) and background materials (rows) that block all the impinging quantum particles except those of energy E0 = 0.1 eV. The transmissivity τ2(E0) at E = 2E0, the half power energy band B(E0)/E0 and the optimal thickness d of the slab are shown in each box.
From: Optimally Sharp Energy Filtering of Quantum Particles via Homogeneous Planar Inclusions
E0 = 0.1 eV | Indium Antimonide (InSb) | Indium Arsenide (InAs) | Indium Nitride (InN) | Gallium Antimonide (GaSb) | Cadmium Telluride (CdTe) |
|---|---|---|---|---|---|
Silicon Carbide (SiC) | τ2 ≅ 0.003 B/E0 ≅ 0.05 d ≅ 145.0 nm | τ2 ≅ 0.006 B/E0 ≅ 0.07 d ≅ 105.2 nm | τ2 ≅ 0.008 B/E0 ≅ 0.08 d ≅ 92.7 nm | τ2 ≅ 0.010 B/E0 ≅ 0.09 d ≅ 81.1 nm | τ2 ≅ 0.026 B/E0 ≅ 0.15 d ≅ 50.1 nm |
Magnesium Oxide (MgO) | τ2 ≅ 0.004 B/E0 ≅ 0.06 d ≅ 149.0 nm | τ2 ≅ 0.007 B/E0 ≅ 0.08 d ≅ 108.1 nm | τ2 ≅ 0.010 B/E0 ≅ 0.09 d ≅ 95.4 nm | τ2 ≅ 0.012 B/E0 ≅ 0.10 d ≅ 83.4 nm | τ2 ≅ 0.031 B/E0 ≅ 0.16 d ≅ 51.8 nm |
Boron Nitride (BN) | τ2 ≅ 0.017 B/E0 ≅ 0.04 d ≅ 149.9 nm | τ2 ≅ 0.003 B/E0 ≅ 0.05 d ≅ 108.8 nm | τ2 ≅ 0.004 B/E0 ≅ 0.06 d ≅ 96.1 nm | τ2 ≅ 0.006 B/E0 ≅ 0.07 d ≅ 84.0 nm | τ2 ≅ 0.014 B/E0 ≅ 0.11 d ≅ 52.2 nm |
Diamond | τ2 ≅ 0.001 B/E0 ≅ 0.02 d ≅ 209.5 nm | τ2 ≅ 0.001 B/E0 ≅ 0.03 d ≅ 153.1 nm | τ2 ≅ 0.002 B/E0 ≅ 0.04 d ≅ 136.0 nm | τ2 ≅ 0.002 B/E0 ≅ 0.04 d ≅ 119.1 nm | τ2 ≅ 0.005 B/E0 ≅ 0.06 d ≅ 76.2 nm |
