Figure 2
From: Probing thermal transport across amorphous region embedded in a single crystalline silicon nanowire
Measurement of electron beam heating technique. (a) Sketch of electron beam heating technique. ∆TL and ∆TR is temperature rise in left and right Pt thermometer, separately. R(x) is the cumulative thermal resistance along the suspended nanowire from the left thermometer to the scanning point of x. The yellow pyramid denotes the irradiating electron beam. (b) Length-dependent cumulative thermal resistance of different nanowires, which are #4, #6, #8, #11, #13 and #14. The slope of amorphous regions overlaps with each other, even for different nanowires with different amorphous lengths, meaning that the amorphous regions with various lengths keep constant thermal conductivity around 1.9 ± 0.25 W/m·K. The cumulative thermal resistance of the rest silicon nanowires is shown in Supporting Information Fig. S5.
