Figure 4
From: Probing thermal transport across amorphous region embedded in a single crystalline silicon nanowire
Measurement of interfacial thermal resistance of CAI. (a) Cumulative thermal resistance across the CAI in Sample #1. Rstep denotes the thermal resistance jump across CAI, obtaining from linear fitting R(x) at both crystalline and amorphous regions, elongating across the interface and thus taking the step. Rstep is used to calculate the interface thermal conductance of CAI. The scale bar is 75 nm. (b) Interface thermal conductance (hINT) and interface thermal resistance (RINT) of Sample #1-Sample #14. hINT = 1/(Rstep·A), where A is the cross section area of each silicon nanowire and RINT = 1/hINT.
