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Figure 1

From: Tuneable interplay between atomistic defects morphology and electrical properties of transparent p-type highly conductive off-stoichiometric Cu-Cr-O delafossite thin films

Figure 1

XRD diffractograms for as-deposited and annealed (at 900 °C) films and (deposited on sapphire). Times of annealing are indicated on the corresponding lines. (a) Grazing incidence diffractograms. The position of diffraction peaks for CuCrO2 (PDF 04–010–3330) is indicated; (b) High resolution scans around the 2θ position of the main (012) peak for as deposited and annealed films. The Δ symbol indicated the shift in 2θ position of the (012) peak.

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