Figure 1
From: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
Schematics of MBE (a) and CSS (b) indicating the differences in design, pressure, temperature, and deposition rates.
Figure 1 | Scientific Reports
From: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
Schematics of MBE (a) and CSS (b) indicating the differences in design, pressure, temperature, and deposition rates.
