Figure 2
From: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
Cross sectional SEM (a) and EBSD (b,c) of films grown in part by CSS CdTe at high rates oriented normal to the cleave and growth surfaces, respectively. Planar EBSD of the top surface (d). Uniform color of the EBSD indicates a single crystal orientation.
