Figure 5
From: Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors
EBSD data showing CdTe grain growth and resulting from high-temperature CdCl2 treatment and subsequent CSS epitaxy. Planar (a) and cross-sectional (d) EBSD for the initially deposited film; planar (b) and cross-sectional (e) EBSD for the recrystallized film; and planar (c) and cross-sectional (f) EBSD for the regrown CdTe film on the recrystallized template.
