Figure 4
From: Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes
(a) Schematic diagram of a hybrid InGaN/AlGaN-CuI blue LED. (b) Electroluminescence (EL) spectrum of a hybrid blue LED. The epitaxial structure before the growth of the CuI layer consists of a sapphire substrate, an n-GaN layer, and InGaN/AlGaN multiple quantum wells. CuI layer was grown on top of the AlGaN barrier. The EL spectrum shows the peak at 437 nm.
