Table 1 Thickness dependent resistivity and Hall measurement date of CuI.

From: Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes

CuI

Sample Number

#1

#2

#3

#4

Thickness \([\mu m]\)

0.283

0.596

0.820

1.340

Resistivity \([\Omega \cdot cm]\)

1.128

1.244

0.489

2.085

Bulk carrier density \([c{m}^{-3}]\)

1.06 × 1018

1.58 × 1017

9.05 × 1017

1.23 × 1017

Hall mobility \([c{m}^{2}\cdot {V}^{-1}\cdot {s}^{-1}]\)

110.27

31.69

14.12

24.32

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