Table 2 Zn doping dependent resistivity and Hall measurement date of CuI.
From: Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes
CuI | Sample Number | #5 | #6 |
Thickness [μm] | 0.854 | 0.947 | |
Resistivity \([\Omega \cdot cm]\) | 43.2 | 53.4 | |
Bulk carrier density \([c{m}^{-3}]\) | 1.67 × 1015 | 6.97 × 1014 | |
Hall mobility \([c{m}^{2}\cdot {V}^{-1}\cdot {s}^{-1}]\) | 86.13 | 167.45 |
