Figure 2
Characteristics of charge transport in graphene with Fe clusters. (a) Resistivity as a function of gate voltage (carrier density n) measured at various temperature. Inset exhibits optical image of the fabricated device. Scale bar is 5 μm. Temperature dependent resistivity measured at VG − VD = +20 V (b) and at CNP (c) in the absence of magnetic field. Red solid line is a fitting curve with Eq. (1). Red dashed line indicates RK(T/TK) of Kondo model. Purple dash-dotted line shows variable-range hopping model. (d) Temperature dependent resistivity at CNP in the presence of the applied magnetic field 9 T, indicating metallic state.
