Figure 1
From: Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
The variation of the in-plane lattice constant (d110) of InAs films grown on the GaAs(111)A (a), Si(111) (b), and GaSb(111)A (c) substrates. The values were measured from the distance between the 11 and \(\bar{1}\)\(\bar{1}\) reflections in the RHEED patterns.
