Table 1 Density of threading defects in InAs on GaAs(111)A, Si(111), and GaSb(111)A [cm−2].
From: Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates
InAs/GaAs(111)A | InAs/Si(111) | InAs/GaSb(111)A | |
|---|---|---|---|
threading dislocation | 2.7 × 109 | 7.5 × 109 | 1.7 × 109 |
stacking fault | 3.0 × 109 | 5.1 × 109 | 1.9 × 109 |
stacking-fault tetrahedron | 8.2 × 108 | 3.0 × 109 | 5.4 × 108 |
