Table 2 Membranes fabricated with lithography assistance.

From: Nanofabrication of Isoporous Membranes for Cell Fractionation

References and authors

Material

Pore size (μm)

Interpore space (μm)

Max. Area (cm2)

Manufacturing methodology

Inorganic membranes

Ogura et al.11

Silicon Nitride

1–1.8

N/A

N/A

Si3N4 deposition, electron beam lithography, plasma etching

Vaeth29

Silicon

3–5

40

1.62

Deposition, hard mask lithography, fluid channel lithography, etching

Warkiani et al.30

Metal

2.5 × 8

N/A

78.5

Multilevel UV-lithography, electroplating

Carter et al.31

Glass (SiO2)

0.5, 3

N/A

14

SiO2 deposition, photolithography, RI etching

Salminen et al.32

Silicon Nitride

3

N/A

-

Lithographic laser writing, RI etching

Organic membranes

Brauker et al.12

Polyimide

20

2–5

1

Polyimide nonporous film formation, lithography, oxygen curing

Zheng et al.13

Parylene

10

10

0.36

Dense Parylene film formation, O2 plasma, etching

Huh et al.20

PDMS

10

30

2

Soft lithography, wet etching

Hosokawa et al.33

PET

4–2

60

4

Photolithography-based electroforming

Xu et al.14

Parylene

6

N/A

0.36

Dense Parylene film formation, Cr/Al deposition, wet etching

Warkiani et al.18

SU-8 photoresist

3 × 12

2–4

UV-lithography, epoxy (SU-8) photopolymerization

Chen et al.21

PDMS

4–20

8–200

9

O2 plasma, photolithography, dry RI etching

Harouaka et al.15

Parylene

4–7

N/A

0.5

Dense Parylene film formation, photolithography, etching

Kim et al.16

Parylene

0.8–4

N/A

0.42

Dense Parylene film and Ti mask formation, photolithography, dry etching

Tang et al.34

PEGDA

5.5–8

24

0.81

Photolithography, molding

Zhou et al.17

Parylene

8

12

1

Dense Parylene film formation, lithography, aluminum etching

Adams et al.19

SU-8 photoresist

5–9

20

<0.64

Dense epoxy-based film formation, photolithography

Musah et al.22

PDMS

7

30

N/A

Soft lithography, wet etching

This work

Mylar, Kapton

0.750

250

38.5

Mylar and Kapton dense films patterned by photolithography and dry RI etching. For submicron pores, a CVD step was added.