Figure 4
From: Tuning Penta-Graphene Electronic Properties Through Engineered Line Defects
Band structures for undoped and doped penta-graphene, as a function of the number of line defects for the sp2 case. (a,b) correspond to the results for Nitrogen and Silicon doping schemes, respectively. Here, X-NL and X-SiL denote the number (X) of dopant lines systematically inserted into the penta-graphene structure.
