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Figure 1

From: Asymmetric electrode incorporated 2D GeSe for self-biased and efficient photodetection

Figure 1

(a) Schematic view of p-GeSe Schottky diode. (b) Optical microscope image of the device. (c) Band diagram of Pd/p-GeSe/Cr. ID-VG characteristics of (d) p-GeSe FET with Pd/Au and (e) Cr/Au with Vds = 1 V to 3 V.T.the semi-logarithmic plots of transfer characteristics are depicted in the insets on each figure. ID-VD characteristics as a function of gate bias (f) Schottky contacts effect of p-GeSe with Cr/Au. (g) Ohmic contact behavior with Pd/Au.

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