Figure 6
From: Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
SEM images (50k× magnification) of the a-IGZO layers manufactured by post annealing in a furnace at (a) 200 °C, (b) 300 °C, (c) 400 °C, and (d) 500 °C. (inset: enlarged SEM images).
