Figure 8
From: Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
C-V curves for −2 V to 4 V in the a-IGZO layers manufactured with post annealing in a furnace at (a) 200 °C, (b) 300 °C, (c) 400 °C, and (d) 500 °C.
