Table 1 Comparison of the electrical parameters of the TiO2-x TFT and the a-IGZO TFT.
From: Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
Active-layer materials | μsat (cm2/Vs) | On/off current ratio | Vth (V) | S/S (V/dec) |
|---|---|---|---|---|
TiO2-x | 0.15 | 7.2 × 103 | 0.40 | 0.31 |
a-IGZO | 11.02 | 6.2 × 106 | 4.94 | 0.87 |
