Figure 1
Optical images of the surface of (a–c) a-Si:H/c-Si and (d–f) a-Si:H/SiOx/c-Si structures. SEM images of (g–i) a-Si:H/SiOx/c-Si structures annealed at 600, 700, and 800 °C. CMP-treated semiconductor-grade c-Si was used as the substrate.
Figure 1 | Scientific Reports
