Figure 10

Deconvolution result of stretching mode in FTIR absorption spectra of a-Si:H fabricated via PECVD at 200, 300, 370, and 450 °C in the as-deposited state.

Deconvolution result of stretching mode in FTIR absorption spectra of a-Si:H fabricated via PECVD at 200, 300, 370, and 450 °C in the as-deposited state.