Figure 4 | Scientific Reports

Figure 4

From: Far-field polarization signatures of surface optical nonlinearity in noncentrosymmetric semiconductors

Figure 4

(a) Dependence of the SHW intensity ISHG on the rotation-angle δ for different \(\eta \) and parameter values \(\varphi =60^\circ \) and \(\alpha =0^\circ \), i.e., pure \(p\)-polarization of the incident plane wave. (b) Normalized values of the difference of the maxima shown in (a), defined by Eq. (13), in dependence on the polarization angle α and the angle of incidence \(\varphi \). (c) Minimal dynamic range of a measurement system needed to achieve detection of the surface contribution to the SHW intensity for different ratios \(\eta \) of surface and bulk nonlinearity.

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