Figure 1
From: Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes
Selective-area regrowth. (a) Selective-area growth (SAG) of vertical GaAs NWs on Si. (b) Deposition of SiO2 by RF sputtering. (c) RIE of top portion of SiO2 film. (d) Selective wet etching to form SiO2 tube. (e) Regrowth of GaAs/InAs/GaAs heterostructures by pulse growth modes.
