Figure 1 | Scientific Reports

Figure 1

From: Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)

Figure 1

Schematic diagram of Ta2O5-based RRAM device and I–V curves (a) schematic of Ti/Pt/Ta2O5/Ta/Pt structure with Ta-Pt top electrode and Pt bottom electrode. Tantalum layer under Pt-TE is (b), (c) 20 nm and (d), (e) 70 nm, respectively. The forming voltage (Vform) in both samples is about 2.5 V. The complimentary resistive switching type only appears when applying higher compliance current to a device having thin Ta layer.

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