Figure 2
From: Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
DC current–voltage characteristics of Pt top electrode devices (a) Ta 20 nm thickness device showing switching mode change from BRS at low C.C. to CRS when increasing C.C. levels. (b) LRS resistance plots of two samples (Ta 20 nm and 70 nm) by sequentially changing C.C. In Ta 20 nm device, LRS level clearly varies indicating switching mode change depending on C.C., while the thicker Ta device maintains LRS level. (c) LRS resistance plot with different forming compliance current (f_C.C.) from 1 to 3 mA.
