Figure 3
From: Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Possible Complementary Resistive Switch (CRS) mechanisms (a) I–V curve of common CRS device. Schematic illustration of complementary resistive switching processes (b) in two anti-serially connected switching elements. (c) In a single bipolar cell with insufficient number of movable ions. (d) In a single bipolar cell with active TE metal electrode. The cell has variable barrier (oxide/TE or inert TE). The white arrow and circle indicate location and movement of oxygen vacancies. And black arrow and circle indicate location and movement of oxygen ions.
