Figure 5
From: Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Resistive switching conduction mechanism (a) I–V characteristics of Pt/Ta(20 nm)/Ta2O5/Pt device with set C.C. = 1 mA (b) Fitting positive voltage I–V data (Sample A, C.C. = 1 mA) for the nonlinear I–V curve (c) I–V characteristics of Pt/Ta(20 nm)/Ta2O5/Pt device with set C.C. = 3 mA (d) Fitting positive voltage I–V data (Sample A, C.C. = 3 mA) for the nonlinear I–V curve: Tunneling conduction at low voltage; Schottky emission at HRS (high voltage). The fitting results are highlighted by color dash line.
