Table 1 Sample condition and measured values of optical band gap, VBM, and work function.
From: Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Oxide | Sputtering process | Optical band gap (eV) | VBM (eV) | Work function (eV) | Schottky barrier height with TE (eV) | |
|---|---|---|---|---|---|---|
Target | Ar/O (sccm) | |||||
Ta2O5 | Ceramic | 20/0 | 3.95 | 1.78 | 3.55 | 2.88 (Ta) |
TaOx (low) | Metal | 20/3 | 2.75 | 1.42 | 4.32 | 2.65 (Pt) |
TaOx (high) | Metal | 20/6 | 2.75 | 1.12 | 4.30 | 2.99 (Pt) |
