Table 3 Magnitude of SY and energy transferred to recoils for different angle of incidences.

From: Nano-scale depth-varying recrystallization of oblique Ar+ sputtered Si(111) layers

Angle of incidence (°)

Sputtering yield (Si atoms/Ar+ ion)

Energy transferred to recoils

30

0.96

70

40

1.35

80

50

2.16

100

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