Figure 1 | Scientific Reports

Figure 1

From: Electric-double-layer p–i–n junctions in WSe2

Figure 1

Schematic cross sections of two lateral WSe2 p–i–n junctions: (a) with top gate (5.3 nm Al2O3), (b) without top gate. (c) TEM image of contact region (Pd/Ti/WSe2) of device D1 and (d) device D2. The TEMs correspond to the same devices for which electrical measurements are reported.

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