Figure 3
Unipolar doping of the WSe2 channel in device D2, used to measure Schottky contact temperature dependence. (a) Schematic cross section under side gate bias to accumulate positive ions on the channel, doping the channel n-type. (b) Corresponding band diagram for unipolar n-doping. (c) Symmetric, nonrectifying characteristics are obtained. To support the highest current measured in Fig. 2 requires less than ~ 0.4 V drop across the two contacts and access region.
