Figure 9
(a) Cross-sectional TEM image of the AlN layer obtained after heat treatment of Al on a GaN substrate at 1573 K for 3 h with an incident beam along GaN [1–100]. The Miller’s indices of AlN and GaN are also presented. (b) EDX spectra at points a, b, c of the AlN layer and point d of the GaN substrate shown in (a). (c) Concentrations of Al, Ga, N and O in at% at points a, b c of the AlN layer and point d of the GaN substrate shown in (a).
