Figure 5

(a) Time of flight measurement: device driven by a constant gate current with application of a 15 s pulse with V_ds = − 100 mV. The inset shows the linear fit of \(\frac{{dI_{ds} }}{dt}\) vs I_gs\(\left( {r^{2} = 0.99} \right)\) yielding the hole mobility \(\mu = \left( {6.6 \pm 0.2} \right) \cdot 10^{ - 2} \,\,\frac{{{\text{cm}}^{2} }}{{{\text{V}}\,{\text{s}}}}\). (b) Gate current response to a constant gate voltage pulse of 15 s with V_ds = 0 V. The charge Q accumulated in the channel has been obtained by integration of I_gs curves, the linear fit of Q vs V_gs\((r^{2} = 0.98) \) yielded a capacitance \(C = \left( {890 \pm 60} \right) \mu F\). (c) I_ds response to a constant V_gs pulse of 15 s at V_ds = − 600 mV (central panel) and V_ds = − 10 mV (lower panel). The red dotted line in the central panel is an exponential fit of the switching behavior of the device, yielding a rise time \(\tau_{r} = \left( {1.13 \pm 0.01} \right) \,\,{\text{s}}\) and a fall time \(\tau_{f} = \left( {4.45 \pm 0.04} \right) \,\,{\text{s}}\).