Figure 4 | Scientific Reports

Figure 4

From: Resistive switching characteristics of carbon nitride supported manganese oxysulfide: an evidence for the sweep dependent transformation of polarity

Figure 4

(A) Inset: The electroforming process of the fabricated device during the initial voltage sweep from 0 to + 10 V. The bipolar nature of the device exhibited during the voltage sweep from + 5 to − 5 V and from − 5 to + 5 V. (B) The unipolar nature of the device during the repeated voltage sweeps from 0 to + 5 and 0 to − 5 V. (B) Inset: I–V characteristics of CN-MOS (b) and CN-MOS (c) material based devices.

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