Figure 2 | Scientific Reports

Figure 2

From: Self-defect-passivation by Br-enrichment in FA-doped Cs1−xFAxPbBr3 quantum dots: towards high-performance quantum dot light-emitting diodes

Figure 2

Electrical and electroluminescent characteristics of the QD-LEDs of Type A, Type B, and Type C. (a) J–V characteristic curves. The inset is J–V curves of semi-logarithmic axes. (b) J–V characteristic curves plotted on double-logarithmic axes. (c) Luminance, (d) external quantum efficiency, and (e) current efficiency plotted as a function of applied bias voltage. (f) Commission International de l’Éclairage 1931 (CIE) coordinates of EL emissions obtained from QD-LEDs, measured at operating voltages of 5.6 V (Type A), 4.4 V (Type B), and 5.1 V (Type C), respectively. (g) Photographs showing bright and uniform EL emission at the operating voltage of 5.6 V (Type A), 4.4 V (Type B), and 5.1 V (Type C), respectively.

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