Table 3 Physical parameters used in the simulation.
From: Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers
Material | \(\Phi _{\text {Material}/{\text{HfO}}_2}\) (eV) | d (nm) | N (\(\hbox {cm}^{-3}\)) | \(W_{\text {t}}\) (eV) | \(W_{\text {opt}}\) (eV) | \(m^*/m_0\) |
|---|---|---|---|---|---|---|
\(\hbox {HfO}_2\) | – | 20 | \((1.7\pm 0.1)\times 10^{20}\) | 1.25 | 2.5 | \(0.59\pm 0.3\) |
Si | 1.9 | – | – | – | – | – |
Ni | 2.5 | – | – | – | – | – |
