Table 1 Parameters used for simulation.
From: Characterization of semi-polar (20\(\overline{2}\)1) InGaN microLEDs
CPSS | SPSS | |
|---|---|---|
MQWs | 6 periods | 3 periods |
EBL | Yes | None |
QW thickness | 3 nm | 3 nm |
In composition in QW | 15.5% | 21.5% |
Non-radiative lifetime in bulk active region (QW) | 50 ns | 10.0 ns |
Non-radiative lifetime in sidewall | 0.1 ns | 0.1 ns |
n-GaN layer \({\upmu }_{\mathrm{n}}\) (cm2/Vs) | 100.0 | 50.0 |
p-GaN layer \({\upmu }_{\mathrm{p}}\) (cm2/Vs) | 2.0 | 2.0 |
