Table 3 Concentration, band gap, resistivity, hall coefficient, carrier concentration and transmittance values of Co-NiO films.

From: Influence of Co concentration on properties of NiO film by sparking under uniform magnetic field

Sample name

Band gap (eV)

Resistivity (Ω cm)

Hall coefficient (cm3/C)

Carrier concentration (cm−3)

Transmittance (400–700 nm) (%)

0 M Co-NiO

3.45

9.9 × 10–3

65.2

9.57 × 1016

93.32

0.05 M Co-NiO

3.33

9.43 × 10–3

61

1.02 × 1017

73.54

0.10 M Co-NiO

3.15

7.89 × 10–3

40.6

1.54 × 1017

58.73

0.15 M Co-NiO

3.06

9.1 × 10–3

50

1.25 × 1017

47.81

0.20 M Co-NiO

2.91

1.07 × 10–2

76

8.21 × 1016

41.34

Commercial ITO

4.34 × 10–4

 − 0.54

1.16 × 1019

92.22