Figure 2
(a) Energy-dispersive x-ray spectroscopy (EDS) plots obtained on the Si micropillar arrays before and after removing SiOx in HF. Two prominent x-ray signals at 0.5 keV and 1.7 keV correspond to oxygen (O Kα) and silicon (Si Kα). (b) The mass fraction of the pillars after applying a ZAF correction (Z: atomic number effects, A: absorption, F: fluorescence). Examples of Monte-Carlo simulations showing a full scale of energy loss contours under a 5 keV e-beam irradiation (c) and Si Kα profile at 10 keV (d). An estimated e-beam probe depth by simulations is 220 nm at 5 keV, 800 nm at 10 keV, 1500 nm at 15 keV, and 2700 nm at 20 keV for Si, respectively, where the injected e-beam loses the 90% of initial energy within the corresponding interaction bulb.
