Figure 1
From: Broadband optical ultrafast reflectivity of Si, Ge and GaAs
(a) Image of the pump and probe spots collected at Si(100) surface, correctly aligned at maximum overlap. (b, c, d) Nearly-circular damaged regions generated by pump pulses at 50 mJ/\(\hbox {cm}^2\) (\(\sim \) 1.7 \(F_{th}^{Si}\)), 26 mJ/\(\hbox {cm}^2\) (\(\sim \) 1.25 \(F_{th}^{Ge}\)) and 12.8 mJ/\(\hbox {cm}^2\) (\(\sim \) 1.33 \(F_{th}^{GaAs}\)) fluence for Si (b), Ge (c) and GaAs (d) respectively.
