Figure 1
From: A spiking and adapting tactile sensor for neuromorphic applications
Structure and characteristics of the PiezoFET. (a) Microscopic image of a PiezoFET (top view). The G, S, D, and B refer to gate, source, drain, and bulk, respectively. (b) Schematic cross-section view of the PiezoFET. AlN and Pt function as an adhesion promoter and a seed layer for the piezoelectric thin film of AlScN. (c) Typical transfer curve of a PiezoFET. The device is operated in the subthreshold regime, which can be modelled by an exponential function (red line). The estimates threshold voltage is 2.75 V. The output characteristic (inset) shows the mean values for a small set of devices (N = 3) with the standard error as the shaded area. (d) Mean values of the current responses of a PiezoFET under periodic rectangular stimuli.
